Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Abstract

Amorphous thin films of InGaZnO(4) (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 degrees C and 150 degrees C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism. (C) 2011 Elsevier B.V. All rights reserved.