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DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology

dc.citation.epage638en_US
dc.citation.issue8en_US
dc.citation.spage637en_US
dc.citation.volume39en_US
dc.citation.woscount12
dc.contributor.authorMeng, CCen_US
dc.contributor.authorLu, SSen_US
dc.contributor.authorChiang, MHen_US
dc.contributor.authorChen, HCen_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2014-12-08T15:41:05Z
dc.date.available2014-12-08T15:41:05Z
dc.date.issued2003-04-17en_US
dc.description.abstractA wideband GaInP/GaAs heterojunction bipolar transistor (HBT) micromixer from DC to 8 GHz with I I dB single-ended conversion gain is demonstrated. The input return loss is better than 10 dB for frequencies up to 9 GHz. The single-to-differential input stage in a Gilbert micromixer renders good wideband frequency response and eliminates the need for common-mode rejection. IP1dB = -17 dBm and IIP3 = -7 dBm are achieved for a small local oscillator power of -2 dBm when LO = 5.35 GHz and PF = 5.7 GHz.en_US
dc.identifier.doi10.1049/el:20030458en_US
dc.identifier.issn0013-5194en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20030458en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/27956
dc.identifier.wosnumberWOS:000182656400001
dc.language.isoen_USen_US
dc.titleDC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technologyen_US
dc.typeArticleen_US

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