A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent anneal
| dc.citation.epage | 261 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 259 | en_US |
| dc.citation.volume | 19 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Lai, WK | en_US |
| dc.contributor.author | Liu, HW | en_US |
| dc.contributor.author | Juang, MH | en_US |
| dc.contributor.author | Chen, NC | en_US |
| dc.contributor.author | Cheng, HC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:48:55Z | |
| dc.date.available | 2014-12-08T15:48:55Z | |
| dc.date.issued | 1998-07-01 | en_US |
| dc.description.abstract | A novel process that implants BF2+ ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided pf poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide. | en_US |
| dc.identifier.doi | 10.1109/55.701436 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.701436 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32534 | |
| dc.identifier.wosnumber | WOS:000074366900016 | |
| dc.language.iso | en_US | en_US |
| dc.title | A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent anneal | en_US |
| dc.type | Article | en_US |