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Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

dc.citation.epageen_US
dc.citation.issue5en_US
dc.citation.volume89en_US
dc.citation.woscount28
dc.contributor.authorChen, Szu-Yien_US
dc.contributor.authorChu, Ta-Yaen_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.contributor.authorSu, Chien-Yingen_US
dc.contributor.authorChen, Chin H.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:16:10Z
dc.date.available2014-12-08T15:16:10Z
dc.date.issued2006-07-31en_US
dc.description.abstractStable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq(3), the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 lm/W at 20 mA/cm(2). The 20% decay lifetime (t(80)) of Cs2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h). (c) 2006 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2335374en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2335374en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11997
dc.identifier.wosnumberWOS:000239520200117
dc.language.isoen_USen_US
dc.titleStable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvementen_US
dc.typeArticleen_US

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