Majority- and minority-carrier traps in Te-doped AlInP
| dc.citation.epage | 286 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 284 | en_US |
| dc.citation.volume | 74 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Wu, YR | en_US |
| dc.contributor.author | Sung, WJ | en_US |
| dc.contributor.author | Lee, WI | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:47:04Z | |
| dc.date.available | 2014-12-08T15:47:04Z | |
| dc.date.issued | 1999-01-11 | en_US |
| dc.description.abstract | The properties of deep levels found in Te-doped AlInP grown by metal-organic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and one minority-carrier trap. The activation energies of majority- and minority-carrier traps are 0.24+/-0.05 and 0.25+/-0.03 eV, respectively. The majority-carrier trap is uniformly distributed, indicating that this level belongs to some kind of bulk defect. (C) 1999 American Institute of Physics. [S0003-6951(99)05202-X]. | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31581 | |
| dc.identifier.wosnumber | WOS:000077942400042 | |
| dc.language.iso | en_US | en_US |
| dc.title | Majority- and minority-carrier traps in Te-doped AlInP | en_US |
| dc.type | Article | en_US |