InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm
| dc.citation.epage | 242 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 239 | en_US |
| dc.citation.volume | 46 | en_US |
| dc.citation.woscount | 13 | |
| dc.contributor.author | Huang, J. Y. | en_US |
| dc.contributor.author | Liang, H. C. | en_US |
| dc.contributor.author | Su, K. W. | en_US |
| dc.contributor.author | Lai, H. C. | en_US |
| dc.contributor.author | Chen, Y. -F. | en_US |
| dc.contributor.author | Huang, K. F. | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:14:56Z | |
| dc.date.available | 2014-12-08T15:14:56Z | |
| dc.date.issued | 2007-01-10 | en_US |
| dc.description.abstract | A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained. (c) 2007 Optical Society of America. | en_US |
| dc.identifier.doi | 10.1364/AO.46.000239 | en_US |
| dc.identifier.issn | 0003-6935 | en_US |
| dc.identifier.journal | APPLIED OPTICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/AO.46.000239 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11233 | |
| dc.identifier.wosnumber | WOS:000243283500015 | |
| dc.language.iso | en_US | en_US |
| dc.title | InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm | en_US |
| dc.type | Article | en_US |