SUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENT
| dc.citation.epage | 851 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 850 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | UENG, SY | en_US |
| dc.contributor.author | CHAO, TS | en_US |
| dc.contributor.author | WANG, PJ | en_US |
| dc.contributor.author | CHEN, WH | en_US |
| dc.contributor.author | CHANG, DC | en_US |
| dc.contributor.author | CHENG, HC | en_US |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:04:00Z | |
| dc.date.available | 2014-12-08T15:04:00Z | |
| dc.date.issued | 1994-05-01 | en_US |
| dc.description.abstract | Thin oxides thermally grown on reactive-ion-etched silicon surfaces in N2O ambient have been studied. As compared with pure oxides grown on the etched silicon in dry oxygen, N2O-grown oxides exhibit significantly stronger immunity to the RIE-induced damages. A great improvement in both time-zero-dielectric-breakdown (TZDB) and time-dependent-breakdown (TDDB) characteristics is observed for the N2O-grown oxides on RIE-treated silicon surfaces. Accelerated tests have shown that the N2O oxide grown on the RIE silicon surface can achieve a lifetime longer than the pure oxide grown on the correspondingly etched silicon surface with a factor over 10(8). | en_US |
| dc.identifier.doi | 10.1109/16.285043 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.285043 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2502 | |
| dc.identifier.wosnumber | WOS:A1994NN18500035 | |
| dc.language.iso | en_US | en_US |
| dc.title | SUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENT | en_US |
| dc.type | Note | en_US |