Improving the quality of electroplated copper films by rapid thermal annealing
| dc.citation.epage | 861 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 858 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chang, SC | en_US |
| dc.contributor.author | Shieh, JM | en_US |
| dc.contributor.author | Dai, BT | en_US |
| dc.contributor.author | Feng, MS | en_US |
| dc.contributor.author | Wang, YL | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:41:17Z | |
| dc.date.available | 2014-12-08T15:41:17Z | |
| dc.date.issued | 2003-03-01 | en_US |
| dc.description.abstract | The leveler, 2-mercaptopyridine (2MP), increases the filling power of copper electroplating electrolytes in plating 0.15 mum vias, but forms the plated copper metals of small-grained column structures with high resistivity. In this,study, we used rapid thermal annealing (RTA) to effectively improve the film quality. After RTA at 400 degreesC for 30 s, the resistivity of Cu deposits was reduced from similar to16.1 to similar to2.4 muOmegacm. Moreover, the Cu(111) intensity of Cu deposits increased after RTA annealing. (C) 2003 American Vacuum Society. [DOI: 10.1116/1.1562641]. | en_US |
| dc.identifier.issn | 1071-1023 | en_US |
| dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28079 | |
| dc.identifier.wosnumber | WOS:000182604000039 | |
| dc.language.iso | en_US | en_US |
| dc.title | Improving the quality of electroplated copper films by rapid thermal annealing | en_US |
| dc.type | Article | en_US |