A 5 GHz RFIC single chip solution in GaInP/GaAs HBT technology

dc.citation.epage	+	en_US
dc.citation.issue	2	en_US
dc.citation.spage	132	en_US
dc.citation.volume	51	en_US
dc.citation.woscount	3
dc.contributor.author	Meng, Chin-Chun	en_US
dc.contributor.author	Wu, Tzung-Han	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.date.accessioned	2014-12-08T15:12:40Z
dc.date.available	2014-12-08T15:12:40Z
dc.date.issued	2008-02-01	en_US
dc.description.abstract	Several high performance GaInP/GaAs heterojunction bipolar transistor (HBT) radio frequency integrated circuits (RFIC) implemented by our research group are reviewed in this article. These demonstrated RFICs include source inductively degenerated cascode low noise amplifiers with inter-stage matching, shunt-series shunt-shunt dual-feedback wideband amplifiers, a broadband Gilbert down-conversion micromixer, Gilbert down-conversion mixers with polyphase filters for image rejection, a dual-conversion Weaver receiver, Gilbert up-conversion mixers with output LC current mirror and quadrature VCOs.	en_US
dc.identifier.issn	0192-6225	en_US
dc.identifier.journal	MICROWAVE JOURNAL	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/9740
dc.identifier.wosnumber	WOS:000253843500018
dc.language.iso	en_US	en_US
dc.title	A 5 GHz RFIC single chip solution in GaInP/GaAs HBT technology	en_US
dc.type	Article	en_US

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