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Double-graded bandgap in Cu(In,Ga)Se-2 thin film solar cells by low toxicity selenization process

dc.citation.epageen_US
dc.citation.issue7en_US
dc.citation.volume105en_US
dc.citation.woscount0
dc.contributor.authorWang, Yi-Chihen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:36:49Z
dc.date.available2014-12-08T15:36:49Z
dc.date.issued2014-08-18en_US
dc.description.abstractA low-toxic selenization with post gallium diffusion (PGD) treatment has been demonstrated to increase the bandgap in the surface Cu(In,Ga)Se-2 (CIGSe) absorbers and to form double-graded bandgap profiles to improve the cell efficiency. The CIGSe absorber with PGD for 5 min increased open-circuit voltage from 0.49 to 0.66V and efficiency from 9.2% to 13.2%, contributed by the enhancement of carrier recombination in the space-charge region. The reduction in short-circuit current from 30.8 to 29.9 mA/cm(2), attributed to the absorption loss in long-wavelength regions, can be potentially improved by further optimization of the minimum bandgap value in gradient valley. (C) 2014 AIP Publishing LLC.en_US
dc.identifier.doi10.1063/1.4893713en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4893713en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/25221
dc.identifier.wosnumberWOS:000341189800106
dc.language.isoen_USen_US
dc.titleDouble-graded bandgap in Cu(In,Ga)Se-2 thin film solar cells by low toxicity selenization processen_US
dc.typeArticleen_US

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