Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection
| dc.citation.epage | 14 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 10 | en_US |
| dc.citation.volume | 12 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chen, Wen-Yi | en_US |
| dc.contributor.author | Rosenbaum, Elyse | en_US |
| dc.contributor.author | Ker, Ming-Dou | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:21:52Z | |
| dc.date.available | 2014-12-08T15:21:52Z | |
| dc.date.issued | 2012-03-01 | en_US |
| dc.description.abstract | Diode-triggered silicon-controlled rectifiers(DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e. g., high speed or low power. | en_US |
| dc.identifier.doi | 10.1109/TDMR.2011.2171487 | en_US |
| dc.identifier.issn | 1530-4388 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TDMR.2011.2171487 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15573 | |
| dc.identifier.wosnumber | WOS:000301236700002 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Charge device model (CDM) | en_US |
| dc.subject | electrostatic discharge (ESD) | en_US |
| dc.subject | silicon-controlled rectifier (SCR) | en_US |
| dc.title | Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection | en_US |
| dc.type | Article | en_US |