Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer
| dc.citation.epage | 9 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 6 | en_US |
| dc.citation.volume | 64 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Lai, Ming-Hui | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:26:30Z | |
| dc.date.available | 2014-12-08T15:26:30Z | |
| dc.date.issued | 2011-10-01 | en_US |
| dc.description.abstract | Ni-metal-induced crystallization (MIC) of amorphous Si (a-Si) has been used to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the leakage current of MIC-TFT is high. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process, which was simple and without extra expensive instrument. The minimum leakage current and on/off current ratio were significantly improved. (C) 2011 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.sse.2011.07.002 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.sse.2011.07.002 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18815 | |
| dc.identifier.wosnumber | WOS:000295251400002 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Metal-induced crystallization (MIC) | en_US |
| dc.subject | Thin film transistors (TFTs) | en_US |
| dc.subject | Chemical oxide | en_US |
| dc.subject | Leakage current | en_US |
| dc.subject | Poly-Si | en_US |
| dc.title | Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer | en_US |
| dc.type | Article | en_US |