1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
| dc.citation.epage | 1223 | en_US |
| dc.citation.issue | 22 | en_US |
| dc.citation.spage | 1222 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Peng, PC | en_US |
| dc.contributor.author | Chang, YH | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Tsai, WK | en_US |
| dc.contributor.author | Lin, G | en_US |
| dc.contributor.author | Lin, CT | en_US |
| dc.contributor.author | Yu, HC | en_US |
| dc.contributor.author | Yang, HP | en_US |
| dc.contributor.author | Hsiao, RS | en_US |
| dc.contributor.author | Lin, KF | en_US |
| dc.contributor.author | Chi, JY | en_US |
| dc.contributor.author | Chi, S | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:18:11Z | |
| dc.date.available | 2014-12-08T15:18:11Z | |
| dc.date.issued | 2005-10-27 | en_US |
| dc.description.abstract | A 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL) with external light injection is presented, having been experimentally demonstrated. The QD VCSEL is fabricated on GaAs substrate. The 3 dB frequency response of the QD VCSEL based on the TO-Can package is enhanced from the free-running 1.75 to 7.44 GHz with the light injection technique. | en_US |
| dc.identifier.doi | 10.1049/el:20053072 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20053072 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13154 | |
| dc.identifier.wosnumber | WOS:000233454800015 | |
| dc.language.iso | en_US | en_US |
| dc.title | 1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection | en_US |
| dc.type | Article | en_US |