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Large-Area Nano-patterning and Fabrication of Vertical Transistor Array by Non-close-packed Polystyrene Spheres

dc.citation.epage18903en_US
dc.citation.issue34en_US
dc.citation.spage18899en_US
dc.citation.woscount0en_US
dc.contributor.authorChen, Yen-Mingen_US
dc.contributor.authorLai, Yu-Yenen_US
dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.contributor.authorChang, Che-Haoen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2015-12-02T02:59:31Z
dc.date.available2015-12-02T02:59:31Z
dc.date.issued2015-09-02en_US
dc.description.abstractWe demonstrated a large-area nanopatterning technique with the help of a non-close-packed PS sphere layer over a large-area substrate. The non-close-packed PS sphere layer is fabricated by blade coating method. It was demonstrated that non-close-packed PS spheres can be achieved within an area of 18 cm x 25 cm on a rigid glass substrate and within an area of 10 cm x 10 cm on a flexible substrate. We also demonstrated that the blade-coated non-close-packed PS sphere layer was suitable for the mass production of vertical organic transistors over a large area.en_US
dc.identifier.doi10.1021/acsami.5b03724en_US
dc.identifier.issn1944-8244en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.5b03724en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/128287
dc.identifier.wosnumberWOS:000360868700001en_US
dc.language.isoen_USen_US
dc.subjectlarge-area nanopatteringen_US
dc.subjectvertical transistorsen_US
dc.subjectpolymer transistorsen_US
dc.subjectorganic transistorsen_US
dc.subjectnanosphere lithographyen_US
dc.titleLarge-Area Nano-patterning and Fabrication of Vertical Transistor Array by Non-close-packed Polystyrene Spheresen_US
dc.typeArticleen_US

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