Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory
| dc.citation.epage | en_US | |
| dc.citation.issue | 16 | en_US |
| dc.citation.volume | 89 | en_US |
| dc.citation.woscount | 18 | |
| dc.contributor.author | Gu, Shaw-Hung | en_US |
| dc.contributor.author | Wang, Tahui | en_US |
| dc.contributor.author | Lu, Wen-Pin | en_US |
| dc.contributor.author | Ku, Yen-Hui Joseph | en_US |
| dc.contributor.author | Lu, Chih-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:37Z | |
| dc.date.available | 2014-12-08T15:15:37Z | |
| dc.date.issued | 2006-10-16 | en_US |
| dc.description.abstract | The authors propose a technique to extract a silicon nitride trap density from stress induced leakage current in a polycrystalline silicon-oxide-nitride-oxide-silicon flash memory cell. An analytical model based on the Frenkel-Poole emission is developed to correlate a nitride trap density with stress induced leakage current. The extracted nitride trap density is 7.0x10(12) cm(-2) eV(-1). They find that nitride trapped charges have a rather uniform distribution in an energy range of measurement (similar to 0.2 eV). (c) 2006 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2360180 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2360180 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11668 | |
| dc.identifier.wosnumber | WOS:000241405200121 | |
| dc.language.iso | en_US | en_US |
| dc.title | Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory | en_US |
| dc.type | Article | en_US |