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SiCl3CCl3 as a novel precursor for chemical vapor deposition of amorphous carbon films.

dc.citation.epageA48en_US
dc.citation.issueen_US
dc.citation.spageA48en_US
dc.citation.volume223en_US
dc.citation.woscount0
dc.contributor.authorChiu, HTen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorWang, LSen_US
dc.contributor.authorPeng, CWen_US
dc.contributor.authorLee, CYen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.date.accessioned2014-12-08T15:42:30Z
dc.date.available2014-12-08T15:42:30Z
dc.date.issued2002-04-07en_US
dc.identifier.issn0065-7727en_US
dc.identifier.journalABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/28864
dc.identifier.wosnumberWOS:000176296800285
dc.language.isoen_USen_US
dc.titleSiCl3CCl3 as a novel precursor for chemical vapor deposition of amorphous carbon films.en_US
dc.typeMeeting Abstracten_US

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