EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS
| dc.citation.epage | L979 | en_US |
| dc.citation.issue | 7B | en_US |
| dc.citation.spage | L977 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | JEN, TS | en_US |
| dc.contributor.author | LEU, ST | en_US |
| dc.contributor.author | CHOU, TC | en_US |
| dc.contributor.author | HONG, JW | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:03:53Z | |
| dc.date.available | 2014-12-08T15:03:53Z | |
| dc.date.issued | 1994-07-15 | en_US |
| dc.description.abstract | N2O-plasma was used to treat the as-deposited a-SiO(x)N(y)/a-SiN(x) gate insulators of inverted-staggered a-Si:H thin-film transistors (TFTs), and its effects on electrical properties of TFTs were investigated. The TFTs with N2O-plasma-treated gate insulators tended to have a smaller threshold voltage (V(th)), V(th) Shift and hysteresis width (W(FB)) of the forward and backward transfer characteristics. In addition, the results of a bias-temperature stress (BTS) experiment showed that the N2O-Plasma-treated devices had a smaller decay of drain current with time. These phenomena demonstrated that the N2O-PlasMa treatment could be used to improve the electrical stability of a-Si:H TFTs. | en_US |
| dc.identifier.doi | 10.1143/JJAP.33.L977 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.33.L977 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2406 | |
| dc.identifier.wosnumber | WOS:A1994PA98300001 | |
| dc.language.iso | en_US | en_US |
| dc.subject | THIN-FILM TRANSISTOR | en_US |
| dc.subject | ELECTRICAL STABILITY | en_US |
| dc.subject | N2O-PLASMA TREATMENT | en_US |
| dc.title | EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS | en_US |
| dc.type | Article | en_US |