Self-Assembled Two-Dimensional Surface Structures for Beam Shaping of GaN-Based Vertical-Injection Light-Emitting Diodes

dc.citation.epage14en_US
dc.citation.issue1en_US
dc.citation.spage12en_US
dc.citation.volume22en_US
dc.citation.woscount18
dc.contributor.authorTsai, Min-Anen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorLin, S. H.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:07:48Z
dc.date.available2014-12-08T15:07:48Z
dc.date.issued2010-01-01en_US
dc.description.abstractEnhanced light extraction and beam shaping of GaN-based vertical-injection light-emitting diodes (VI-LEDs) employing biomimetic surface structures were demonstrated. The biomimetic surface structures were fabricated using self-assembled polystyrene nanospheres serving as a monolayer mask, and followed by anisotropic inductively coupled plasma reactive ion etching. The light output power of the VI-LEDs with the patterned structures exhibited an efficiency enhancement factor of 68% at a driving current of 350 mA, compared to those without any surface structures. The structures also resulted in a modified heart-shaped radiation pattern, which is preferable for backlight applications in flat panel displays.en_US
dc.identifier.doi10.1109/LPT.2009.2034470en_US
dc.identifier.issn1041-1135en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2009.2034470en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/6139
dc.identifier.wosnumberWOS:000272843700001
dc.language.isoen_USen_US
dc.subjectBiomimetic structureen_US
dc.subjectpolystyrene (PS) nanospheresen_US
dc.subjectvertical-injection light-emitting diodes (VI-LEDs)en_US
dc.titleSelf-Assembled Two-Dimensional Surface Structures for Beam Shaping of GaN-Based Vertical-Injection Light-Emitting Diodesen_US
dc.typeArticleen_US

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