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Demonstration of edge roughness effect on the magnetization reversal of spin valve submicron wires

dc.citation.epageen_US
dc.citation.issue2en_US
dc.citation.volume97en_US
dc.citation.woscount8
dc.contributor.authorChiang, T. W.en_US
dc.contributor.authorChang, L. J.en_US
dc.contributor.authorYu, C.en_US
dc.contributor.authorHuang, S. Y.en_US
dc.contributor.authorChen, D. C.en_US
dc.contributor.authorYao, Y. D.en_US
dc.contributor.authorLee, S. F.en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:06:34Z
dc.date.available2014-12-08T15:06:34Z
dc.date.issued2010-07-12en_US
dc.description.abstractWe prepared submicron wide trilayer spin valve wires designed with periodic "spikes" as artificial roughness. The height and the pitch of the spikes were varied systematically. No obvious dependence was found between the roughness and the domain wall velocity when the spikes were smaller than a threshold of 30 nm for NiFe. The average velocity was slowed down when the height of the spikes were larger than the threshold. In-plane transverse magnetic fields help to reduce the critical current density for current induced domain-wall motion. Our results could be attributed to the space modulation of the local magnetization. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3463459]en_US
dc.identifier.doi10.1063/1.3463459en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3463459en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5140
dc.identifier.wosnumberWOS:000279999800034
dc.language.isoen_USen_US
dc.titleDemonstration of edge roughness effect on the magnetization reversal of spin valve submicron wiresen_US
dc.typeArticleen_US

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