Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure
| dc.citation.epage | 636 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 634 | en_US |
| dc.citation.volume | 25 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | Kuo, PY | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:38:37Z | |
| dc.date.available | 2014-12-08T15:38:37Z | |
| dc.date.issued | 2004-09-01 | en_US |
| dc.description.abstract | In this letter, we developed a new self-aligned Schottky barrier source and ohmic body contact (SSOB) method that can effectively suppress the floating-body effect in poly-Si thin-film transistors (TFTs). Experimental results,show that the SSOB-TFTs give higher output resistance, less threshold voltage variation, improved subthreshold characteristics, and larger breakdown voltage compared with conventional TFTs. The characteristics of the SSOB-TFTs are suitable for high-performance driving TFTs with a high output resistance and large breakdown voltage. | en_US |
| dc.identifier.doi | 10.1109/LED.2004.834635 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2004.834635 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26416 | |
| dc.identifier.wosnumber | WOS:000223577600015 | |
| dc.language.iso | en_US | en_US |
| dc.subject | floating-body effect | en_US |
| dc.subject | kink effect | en_US |
| dc.subject | ohmic body contact | en_US |
| dc.subject | poly-Si TFTs | en_US |
| dc.subject | Schottky barrier source | en_US |
| dc.title | Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure | en_US |
| dc.type | Article | en_US |