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Efficiency improvement of single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process

dc.citation.epageen_US
dc.citation.issue8en_US
dc.citation.volume24en_US
dc.citation.woscount10
dc.contributor.authorChang, Yi-Anen_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorYang, Su-Fanen_US
dc.contributor.authorLai, Li-Wenen_US
dc.contributor.authorLai, Li-Hongen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:08:57Z
dc.date.available2014-12-08T15:08:57Z
dc.date.issued2009-08-12en_US
dc.description.abstractIn this study, single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process are presented. The characteristics of the single-junction InGaP solar cells with and without the micro-hole array surface texture are studied. An increase of 10.4% in short-circuit current is found when a single-junction InGaP solar cell is fabricated by the micro-hole array surface texture process. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 13.8% to 15.9% when the size of the micro-holes is 5.3 mu m and the period of micro-hole array is designed to 5 mu m.en_US
dc.identifier.doi10.1088/0268-1242/24/8/085007en_US
dc.identifier.issn0268-1242en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/24/8/085007en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/6820
dc.identifier.wosnumberWOS:000268301000007
dc.language.isoen_USen_US
dc.titleEfficiency improvement of single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture processen_US
dc.typeArticleen_US

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