High quality ultrathin CoTiO3 high-k gate dielectrics
| dc.citation.epage | 434 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 433 | en_US |
| dc.citation.volume | 3 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | Pan, TM | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Chang, KL | en_US |
| dc.contributor.author | Hsieh, KC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:51Z | |
| dc.date.available | 2014-12-08T15:44:51Z | |
| dc.date.issued | 2000-09-01 | en_US |
| dc.description.abstract | A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3/Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2000 The Electrochemical Society. S1099-0062(00)03-095-9. All rights reserved. | en_US |
| dc.identifier.doi | 10.1149/1.1391170 | en_US |
| dc.identifier.issn | 1099-0062 | en_US |
| dc.identifier.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.1391170 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30280 | |
| dc.identifier.wosnumber | WOS:000088261000012 | |
| dc.language.iso | en_US | en_US |
| dc.title | High quality ultrathin CoTiO3 high-k gate dielectrics | en_US |
| dc.type | Article | en_US |
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