Improving Resistance Switching Characteristics with SiGeO(x)/SiGeON Double Layer for Nonvolatile Memory Applications
| dc.citation.epage | H421 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | H419 | en_US |
| dc.citation.volume | 14 | en_US |
| dc.contributor.author | Syu, Yong-En | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Tsai, Chih-Tsung | en_US |
| dc.contributor.author | Chang, Geng-Wei | en_US |
| dc.contributor.author | Tsai, Tsung-Ming | en_US |
| dc.contributor.author | Chang, Kuan-Chang | en_US |
| dc.contributor.author | Tai, Ya-Hsiang | en_US |
| dc.contributor.author | Tsai, Ming-Jinn | en_US |
| dc.contributor.author | Sze, Simon M. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:39Z | |
| dc.date.available | 2014-12-08T15:37:39Z | |
| dc.date.issued | 2011-01-01 | en_US |
| dc.description.abstract | The switching layer with SiGeO(x)/SiGeON structure is investigated to improve the electrical characteristics of resistive nonvolatile memory. A bipolar resistance switching behavior owning inferior stability was observed in Pt/SiGeO(x)/TiN memory cells. To obtain practical memory, a convenient and compatible SiGeON (similar to 5 nm) is introduced at SiGeO(x)/anode interface to stabilize the disruption length of filaments near anode electrode. Compared with Pt/SiGeO(x)/TiN memory cells, the proposed Pt/SiGeO(x)/SiGeON/TiN cells is effective at minimizing the dispersions of memory switching parameters. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3615823] All rights reserved. | en_US |
| dc.identifier.doi | 10.1149/1.3615823 | en_US |
| dc.identifier.issn | 1099-0062 | en_US |
| dc.identifier.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3615823 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25908 | |
| dc.language.iso | en_US | en_US |
| dc.title | Improving Resistance Switching Characteristics with SiGeO(x)/SiGeON Double Layer for Nonvolatile Memory Applications | en_US |
| dc.type | Article | en_US |
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