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Temperature Sensing by Using Film Bulk Acoustic Resonator at 2.4 GHz Band

dc.citation.epageen_US
dc.citation.issue11en_US
dc.citation.volume48en_US
dc.citation.woscount0
dc.contributor.authorKao, Yao-Huangen_US
dc.contributor.authorLin, Jon-Hongen_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2014-12-08T15:08:27Z
dc.date.available2014-12-08T15:08:27Z
dc.date.issued2009-11-01en_US
dc.description.abstractA four-layered film bulk acoustic resonator (FBAR) with an Al/AlN/SiN/Au composite structure was fabricated The FBAR is composed of a surface micromachined cantilever whose copper scarification layer is released by wet etching. A temperature coefficient (TC) of resonant frequency of -34 5 ppm/degrees C in the temperature range from 10 to 80 degrees C at 2 4 GHz is obtained. Using this resonator, an oscillator for temperature sensing was constructed, in which temperature can be detected easily by measuring the shift in oscillation frequency The TC of the oscillator is almost the same as that of the resonator. (C) 2009 The Japan Society of Applied Physicsen_US
dc.identifier.doi10.1143/JJAP.48.115501en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.115501en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/6530
dc.identifier.wosnumberWOS:000272265300058
dc.language.isoen_USen_US
dc.titleTemperature Sensing by Using Film Bulk Acoustic Resonator at 2.4 GHz Banden_US
dc.typeArticleen_US

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