Enhancing the light extraction of (AlxGa1-x)(0.5)In0.5P-based light-emitting diode fabricated via geometric sapphire shaping
| dc.citation.epage | 371 | en_US |
| dc.citation.issue | 5-8 | en_US |
| dc.citation.spage | 369 | en_US |
| dc.citation.volume | 20 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | Lee, Yea-Chen | en_US |
| dc.contributor.author | Lee, Chia-En | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:33Z | |
| dc.date.available | 2014-12-08T15:12:33Z | |
| dc.date.issued | 2008-03-01 | en_US |
| dc.description.abstract | AlGaInP-based light-emitting diodes (LEDs) with a transparent sapphire substrate were fabricated by. the glue-bonding (GB) method. This transparent sapphire substrate is a geometric shaping structure by wet etching processes. Furthermore, the n-side-up surface has a nano-roughened texture by natural mask and chemical wet etching processes. The light output of this novel LED structure could be enhanced about 26.7% (at 350 mA) due to the higher light extraction as compared with the conventional GB-LEDs. | en_US |
| dc.identifier.doi | 10.1109/LPT.2008.916905 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2008.916905 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9629 | |
| dc.identifier.wosnumber | WOS:000257952800015 | |
| dc.language.iso | en_US | en_US |
| dc.subject | alGaInP-based light-emitting diodes (LEDs) | en_US |
| dc.subject | geometric sapphire shaping light-emitting diodes (GSS-LEDs) | en_US |
| dc.subject | glue bonding (GB) | en_US |
| dc.subject | sapphire chemical wet etching | en_US |
| dc.title | Enhancing the light extraction of (AlxGa1-x)(0.5)In0.5P-based light-emitting diode fabricated via geometric sapphire shaping | en_US |
| dc.type | Article | en_US |