Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor
| dc.citation.epage | 5751 | en_US |
| dc.citation.issue | 44 | en_US |
| dc.citation.spage | 5749 | en_US |
| dc.citation.woscount | 39 | |
| dc.contributor.author | Lin, Chih-Heng | en_US |
| dc.contributor.author | Hsiao, Cheng-Yun | en_US |
| dc.contributor.author | Hung, Cheng-Hsiung | en_US |
| dc.contributor.author | Lo, Yen-Ren | en_US |
| dc.contributor.author | Lee, Cheng-Che | en_US |
| dc.contributor.author | Su, Chun-Jung | en_US |
| dc.contributor.author | Lin, Horng-Chin | en_US |
| dc.contributor.author | Ko, Fu-Hsiang | en_US |
| dc.contributor.author | Huang, Tiao-Yuan | en_US |
| dc.contributor.author | Yang, Yuh-Shyong | en_US |
| dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
| dc.contributor.department | 生物科技學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Biological Science and Technology | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:54Z | |
| dc.date.available | 2014-12-08T15:12:54Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture. | en_US |
| dc.identifier.doi | 10.1039/b812968a | en_US |
| dc.identifier.issn | 1359-7345 | en_US |
| dc.identifier.journal | CHEMICAL COMMUNICATIONS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1039/b812968a | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9940 | |
| dc.identifier.wosnumber | WOS:000260889800021 | |
| dc.language.iso | en_US | en_US |
| dc.title | Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor | en_US |
| dc.type | Article | en_US |