Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell
| dc.citation.epage | 1190 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 1188 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Ma, H. C. | en_US |
| dc.contributor.author | Chou, Y. L. | en_US |
| dc.contributor.author | Chiu, J. P. | en_US |
| dc.contributor.author | Wang, Tahui | en_US |
| dc.contributor.author | Ku, S. H. | en_US |
| dc.contributor.author | Zou, N. K. | en_US |
| dc.contributor.author | Chen, Vincent | en_US |
| dc.contributor.author | Lu, W. P. | en_US |
| dc.contributor.author | Chen, K. C. | en_US |
| dc.contributor.author | Lu, Chih-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:08:23Z | |
| dc.date.available | 2014-12-08T15:08:23Z | |
| dc.date.issued | 2009-11-01 | en_US |
| dc.description.abstract | Program-charge effects in a SONOS Flash cell on the amplitude of random telegraph noise (RTN) are investigated. We measure RTN in 45 planar SONOS cells and 40 floating-gate (FG) cells in erase state and program state, respectively. We find that a SONOS cell has a wide spread in RTN amplitudes after programming, while an FG cell has identical RTN amplitudes in erase and program states at the same read-current level. A 3-D atomistic simulation is performed to calculate RTN amplitudes. Our result shows that the wide spread of program-state RTN amplitudes in a SONOS cell is attributed to a current-path-percolation effect caused by random discrete nitride charges. | en_US |
| dc.identifier.doi | 10.1109/LED.2009.2030589 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2030589 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6495 | |
| dc.identifier.wosnumber | WOS:000271151500024 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Percolation | en_US |
| dc.subject | program charge | en_US |
| dc.subject | random telegraph noise (RTN) | en_US |
| dc.subject | SONOS | en_US |
| dc.title | Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell | en_US |
| dc.type | Article | en_US |