Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing
| dc.citation.epage | + | en_US |
| dc.citation.issue | 47 | en_US |
| dc.citation.spage | 4845 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 31 | |
| dc.contributor.author | Sung, Chao-Feng | en_US |
| dc.contributor.author | Kekuda, Dhananjay | en_US |
| dc.contributor.author | Chu, Li Fen | en_US |
| dc.contributor.author | Lee, Yuh-Zheng | en_US |
| dc.contributor.author | Chen, Fang-Chung | en_US |
| dc.contributor.author | Wu, Meng-Chyi | en_US |
| dc.contributor.author | Chu, Chih-Wei | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2014-12-08T15:08:03Z | |
| dc.date.available | 2014-12-08T15:08:03Z | |
| dc.date.issued | 2009-12-18 | en_US |
| dc.description.abstract | C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm(2) V(-1) s(-1) and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. | en_US |
| dc.identifier.doi | 10.1002/adma.200901215 | en_US |
| dc.identifier.issn | 0935-9648 | en_US |
| dc.identifier.journal | ADVANCED MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/adma.200901215 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6308 | |
| dc.identifier.wosnumber | WOS:000273366200014 | |
| dc.language.iso | en_US | en_US |
| dc.title | Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing | en_US |
| dc.type | Article | en_US |