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The leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption

dc.citation.epage2218en_US
dc.citation.issue6en_US
dc.citation.spage2216en_US
dc.citation.volume146en_US
dc.citation.woscount5
dc.contributor.authorLai, JMen_US
dc.contributor.authorChieng, WHen_US
dc.contributor.authorLin, BCen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorTsai, Cen_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:46:32Z
dc.date.available2014-12-08T15:46:32Z
dc.date.issued1999-06-01en_US
dc.description.abstractAn intrinsic defect may exist in thin gate oxides. Such a defect can increase the leakage current in a manner similar to stress-induced leakage current. In this paper, we have shown that the effect of this intrinsic defect can be greatly reduced by in situ removal of the native oxide followed by growing a high-quality thermal oxide. By using such in situ cleaning, ultrathin oxides can be prepared with atomically smooth interfaces, good thickness uniformity, and reduced leakage currents. (C) 1999 The Electrochemical Society. All rights reserved.en_US
dc.identifier.doi10.1149/1.1391916en_US
dc.identifier.issn0013-4651en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1391916en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/31305
dc.identifier.wosnumberWOS:000080930500037
dc.language.isoen_USen_US
dc.titleThe leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorptionen_US
dc.typeArticleen_US

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