Temperature Dependence of Breakdown Voltage in Silicon Abrupt p-n Junctions
| dc.citation.epage | 88 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 83 | en_US |
| dc.citation.volume | 5 | en_US |
| dc.contributor.author | 張俊彥 | zh_TW |
| dc.contributor.author | 邱勝雄 | zh_TW |
| dc.contributor.author | 許祿寶 | zh_TW |
| dc.contributor.author | C.Y.Chang | en_US |
| dc.contributor.author | S.S.Chiu | en_US |
| dc.contributor.author | Lu-Pao Hsu | en_US |
| dc.date.accessioned | 2017-10-06T06:18:01Z | |
| dc.date.available | 2017-10-06T06:18:01Z | |
| dc.date.issued | 1971-04 | en_US |
| dc.description.abstract | Temperature dependence of breakdowm voltage in silicon abrupt p+n junction has been calculated using a modified Baraff theory and measured experimentally from 77°K to 500°K, and with the substrate doping from 10^15 cm^-3 to 10^18 cm^-3. Experimental data are in good agreement with the results of the theoretical calculations. These results strongly substantiate the validity of the modified Baraff theory which has been pointed out by Sze and Cowwell. | en_US |
| dc.identifier.journal | 交大學刊 | zh_TW |
| dc.identifier.journal | SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/137464 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | 交大學刊編輯委員會 | zh_TW |
| dc.title | Temperature Dependence of Breakdown Voltage in Silicon Abrupt p-n Junctions | en_US |
| dc.type | Campus Publications | en_US |