An Empirical Defect-Related Photo Leakage Current Model for LTPS TFTs Based on the Unit Lux Current
| dc.citation.epage | 1022 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 1015 | en_US |
| dc.citation.volume | 57 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Tai, Ya-Hsiang | en_US |
| dc.contributor.author | Kuo, Yan-Fu | en_US |
| dc.contributor.author | Sun, Guo-Pei | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:06:57Z | |
| dc.date.available | 2014-12-08T15:06:57Z | |
| dc.date.issued | 2010-05-01 | en_US |
| dc.description.abstract | In this paper, the photosensitive effect of n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) after dc stress is analyzed. It is found that the illumination behaviors for poly-Si TFTs are dependent on the defect types created by different stress conditions of hot-carrier and self-heating effects. For a given stress-induced device degradation, the anomalous illumination behaviors are observed, and these photo-induced leakage currents are not included in the present SPICE device model. Therefore, based on trap-assisted and Poole-Frenkel effect, an empirical defect-related photo leakage current model based on Unit Lux Current (ULC) is proposed to depict the photo-induced current after device degradation. Furthermore, the verified equation of ULC is analytically derived and has good agreement with the experimental data. | en_US |
| dc.identifier.doi | 10.1109/TED.2010.2044292 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2010.2044292 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5432 | |
| dc.identifier.wosnumber | WOS:000278066500008 | |
| dc.language.iso | en_US | en_US |
| dc.subject | DC stress | en_US |
| dc.subject | leakage current | en_US |
| dc.subject | photosensitivity | en_US |
| dc.subject | poly-Si thin-film transistor (TFT) | en_US |
| dc.title | An Empirical Defect-Related Photo Leakage Current Model for LTPS TFTs Based on the Unit Lux Current | en_US |
| dc.type | Article | en_US |