Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon
| dc.citation.epage | 771 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 767 | en_US |
| dc.citation.volume | 38 | en_US |
| dc.contributor.author | Wang, Bau-Ming | en_US |
| dc.contributor.author | Wu, Yewchung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:40:26Z | |
| dc.date.available | 2014-12-08T15:40:26Z | |
| dc.date.issued | 2009-06-01 | en_US |
| dc.description.abstract | Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon thin-film transistors. However, the NILC process often leads to Ni and NiSi(2) precipitates being trapped. In this study, two kinds of films were used as gettering layers: (1) amorphous Si and (2) phosphorus-doped amorphous Si. After annealing at 550A degrees C for 12 h, it was found that phosphorous dopant did improve the gettering efficiency of amorphous Si. | en_US |
| dc.identifier.doi | 10.1007/s11664-009-0750-2 | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s11664-009-0750-2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27598 | |
| dc.identifier.wosnumber | WOS:000267031600010 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Ni gettering | en_US |
| dc.subject | phosphorus dopant | en_US |
| dc.subject | chemical oxide (chem-SiO(2)) | en_US |
| dc.title | Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon | en_US |
| dc.type | Article; Proceedings Paper | en_US |