Spin-dependent Hall effect in semiconductor quantum wells
| dc.citation.epage | 1923 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 1918 | en_US |
| dc.citation.volume | 95 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Huang, HC | en_US |
| dc.contributor.author | Voskoboynikov, O | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2014-12-08T15:39:36Z | |
| dc.date.available | 2014-12-08T15:39:36Z | |
| dc.date.issued | 2004-02-15 | en_US |
| dc.description.abstract | We present a theoretical study of the spin-dependent scattering of electrons from screened attractive and repulsive impurities in III-V semiconductor quantum wells. The effective one-band Hamiltonian and the Rashba spin-orbit interaction are used. We demonstrated that the asymmetry of the spin-dependent skew-scattering and side-jump effect can lead to a quite large spin-dependent (anomalous) Hall effect at zero magnetic field in all-semiconductor quantum well structures. Our theory predicts a measurable spin-dependent Hall angle that reaches about 2.5x10(-3) rad for a CdTe/InSb/CdTe quantum well with impurities doped in the center of the well. (C) 2004 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1641147 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1641147 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27024 | |
| dc.identifier.wosnumber | WOS:000188654100047 | |
| dc.language.iso | en_US | en_US |
| dc.title | Spin-dependent Hall effect in semiconductor quantum wells | en_US |
| dc.type | Article | en_US |