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Effects of interface bonding configuration on photoluminescence of ZnO quantum dots-SiOxNy nanocomposite films

dc.citation.epage1162en_US
dc.citation.issue4en_US
dc.citation.spage1155en_US
dc.citation.volume23en_US
dc.citation.woscount5
dc.contributor.authorPeng, Yu-Yunen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.contributor.authorHsu, Chia-Hungen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:12:25Z
dc.date.available2014-12-08T15:12:25Z
dc.date.issued2008-04-01en_US
dc.description.abstractNanocomposite films containing ZnO quantum dots (QDs) and SiOxNy matrix were prepared by target-attached radio frequency sputtering. Photoluminescence (PL) dominated by violet and blue emissions was observed from all ZnO QD-SiOxNy nanocomposite films with dot diameters ranging from 2.77 to 6.65 nm. X-ray photoemission spectroscopy (XPS) revealed the formation of nitrogen-correlated bonding configurations in both the SiOxNy matrix and the dot/matrix interfaces. The nitrogen-correlated configuration at the interface produced a substantial polarization effect at dot surface. The suppression of green-yellow emission observed in photoluminescence spectra of all samples was ascribed to the hole-trapping process promoted by the enhancement of the surface polarization.en_US
dc.identifier.doi10.1557/jmr.2008.0134en_US
dc.identifier.issn0884-2914en_US
dc.identifier.journalJOURNAL OF MATERIALS RESEARCHen_US
dc.identifier.urihttp://dx.doi.org/10.1557/jmr.2008.0134en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9538
dc.identifier.wosnumberWOS:000254684500037
dc.language.isoen_USen_US
dc.titleEffects of interface bonding configuration on photoluminescence of ZnO quantum dots-SiOxNy nanocomposite filmsen_US
dc.typeArticleen_US

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