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Generation properties of coherent infrared radiation in the optical absorption region of GaSe crystal

dc.citation.epage10644en_US
dc.citation.issue22en_US
dc.citation.spage10636en_US
dc.citation.volume14en_US
dc.citation.woscount23
dc.contributor.authorChen, Ching-Weien_US
dc.contributor.authorHsu, Yu-Kueien_US
dc.contributor.authorHuang, Jung Y.en_US
dc.contributor.authorChang, Chen-Shiungen_US
dc.contributor.authorZhang, Jing-Yuanen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:15:35Z
dc.date.available2014-12-08T15:15:35Z
dc.date.issued2006-10-30en_US
dc.description.abstractWe report a study of the effect of optical absorption on generation of coherent infrared radiation from mid-IR to THz region from GaSe crystal. The infrared-active modes of epsilon-GaSe crystal at 236 cm(-1) and 214 cm(-1) were found to be responsible for the observed optical dispersion and infrared absorption edge. Based upon phase matching characteristics of GaSe for difference-frequency generation (DFG), new Sellmeier equations of GaSe were proposed. The output THz power variation with wavelength can be properly explained with a decrease of parametric gain and the spectral profile of absorption coefficient of GaSe. The adverse effect of infrared absorption on (DFG) process can partially be compensated by doping GaSe crystal with erbium ions. (c) 2006 Optical Society of America.en_US
dc.identifier.doi10.1364/OE.14.010636en_US
dc.identifier.issn1094-4087en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.14.010636en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11653
dc.identifier.wosnumberWOS:000242324500060
dc.language.isoen_USen_US
dc.titleGeneration properties of coherent infrared radiation in the optical absorption region of GaSe crystalen_US
dc.typeArticleen_US

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