Ferroelectricity and negative temperature coefficient of resistance in pulsed-laser-deposited (Pb, Sr) TiO(3) films

dc.citation.epageen_US
dc.citation.issue8en_US
dc.citation.volume41en_US
dc.citation.woscount6
dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorLai, Yi-Shengen_US
dc.contributor.authorLiou, Sz-Chianen_US
dc.contributor.authorTsai, Chun-Chienen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:12:17Z
dc.date.available2014-12-08T15:12:17Z
dc.date.issued2008-04-21en_US
dc.description.abstract(Pb, Sr)TiO(3) films deposited on Pt/SiO(2)/Si substrates by pulsed-laser deposition (PLD) at 400 degrees C with oxygen pressures ranging from 50 to 200 mTorr have been investigated. The paraelectricity-to-ferroelectricity transition of films depends on the oxygen pressure during deposition. Films deposited at 200 mTorr exhibit paraelectric-like nature, whereas films deposited at lower pressures present the ferroelectric characteristic. The (Pb, Sr) TiO(3) film is found to exhibit a negative temperature coefficient of resistance (NTCR) at the measurement temperature ranging from 30 to 390 degrees C. This work demonstrates that the ferroelectricity/paraelectricity and the temperature coefficient of resistance of (Pb, Sr) TiO(3) films could be controlled by oxygen pressures during PLD.en_US
dc.identifier.doi10.1088/0022-3727/41/8/085304en_US
dc.identifier.issn0022-3727en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/41/8/085304en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9446
dc.identifier.wosnumberWOS:000254329500035
dc.language.isoen_USen_US
dc.titleFerroelectricity and negative temperature coefficient of resistance in pulsed-laser-deposited (Pb, Sr) TiO(3) filmsen_US
dc.typeArticleen_US

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