THE PHYSICOCHEMICAL PROPERTIES AND GROWTH-MECHANISM OF OXIDE (SIO2-XFX) BY LIQUID-PHASE DEPOSITION WITH H2O ADDITION ONLY
| dc.citation.epage | 3181 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 3177 | en_US |
| dc.citation.volume | 141 | en_US |
| dc.citation.woscount | 47 | |
| dc.contributor.author | YEH, CF | en_US |
| dc.contributor.author | CHEN, CL | en_US |
| dc.contributor.author | LIN, GH | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:43Z | |
| dc.date.available | 2014-12-08T15:03:43Z | |
| dc.date.issued | 1994-11-01 | en_US |
| dc.description.abstract | Silicon oxide formation was studied by a novel liquid phase deposition (LPD) method with H2O addition only at 35-degrees-C. The deposition rate could be controlled by varying the quantity of H2O added. The LPD-oxide was lightly oxygen-deficient. FTIR spectra and AES depth profiles indicate that a small amount of fluorine was incorporated into the oxide. The composition of LPD-oxide can be represented as SiO2-xFx. The physicochemical properties of LPD oxide were investigated, as was the behavior of fluorine in the oxide and the chemical reaction. A model for the LPD mechanism is proposed that satisfactorily explains all of the experimental phenomena observed. | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2262 | |
| dc.identifier.wosnumber | WOS:A1994PQ52400044 | |
| dc.language.iso | en_US | en_US |
| dc.title | THE PHYSICOCHEMICAL PROPERTIES AND GROWTH-MECHANISM OF OXIDE (SIO2-XFX) BY LIQUID-PHASE DEPOSITION WITH H2O ADDITION ONLY | en_US |
| dc.type | Article | en_US |