Self-assembled InAs quantum wire lasers
| dc.citation.epage | 1223 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 1221 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Lin, Zhi-Chang | en_US |
| dc.contributor.author | Lu, Chia-Ying | en_US |
| dc.contributor.author | Lee, Chien-Ping | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:53Z | |
| dc.date.available | 2014-12-08T15:15:53Z | |
| dc.date.issued | 2006-09-01 | en_US |
| dc.description.abstract | Self-assembled InAs quantum wires in an InGaAs matrix on the InP substrate were obtained successfully by MBE growth. Quantum wire lasers emitting in the 1.7 mu m range were demonstrated. Polarization-sensitive photoluminescence (PL) and laser characterization with different temperatures were performed to study the behaviour of the quantum wire lasers. The polarization dependence on the PL spectra and the dependence on cavity orientation for the lasing characteristics clearly demonstrate the 1D behaviour of the quantum wires. | en_US |
| dc.identifier.doi | 10.1088/0268-1242/21/9/002 | en_US |
| dc.identifier.issn | 0268-1242 | en_US |
| dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0268-1242/21/9/002 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11859 | |
| dc.identifier.wosnumber | WOS:000240123200003 | |
| dc.language.iso | en_US | en_US |
| dc.title | Self-assembled InAs quantum wire lasers | en_US |
| dc.type | Article | en_US |