Passivation of copper films with magnesium doping using recoil ion implantation
| dc.citation.epage | 186 | en_US |
| dc.citation.issue | 1-2 | en_US |
| dc.citation.spage | 180 | en_US |
| dc.citation.volume | 358 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Wu, ZC | en_US |
| dc.contributor.author | Liu, YL | en_US |
| dc.contributor.author | Chen, MC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:47Z | |
| dc.date.available | 2014-12-08T15:45:47Z | |
| dc.date.issued | 2000-01-10 | en_US |
| dc.description.abstract | This work investigates the effects of Ar+ ion implantation through a multilayer structure of SiO2(100 nm)/Mg(20 nm)/Cu/SiO2/Si on the oxidation resistance of Cu films. Experimental results indicate that implantation at 130 keV to a dose of 5 X 10(15) cm(-2) significantly enhances the oxidation resistance at temperatures up to 375 degrees C. At this energy, a small number of Mg atoms are knocked out, leading to formation of an impervious MgO barrier layer on the Cu surface, which effectively suppresses the oxidizing diffusion paths. (C) 2000 Elsevier Science S.A. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0040-6090(99)00660-4 | en_US |
| dc.identifier.issn | 0040-6090 | en_US |
| dc.identifier.journal | THIN SOLID FILMS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0040-6090(99)00660-4 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30807 | |
| dc.identifier.wosnumber | WOS:000084649700027 | |
| dc.language.iso | en_US | en_US |
| dc.subject | copper | en_US |
| dc.subject | ion implantation | en_US |
| dc.subject | magnesium | en_US |
| dc.subject | oxidation | en_US |
| dc.title | Passivation of copper films with magnesium doping using recoil ion implantation | en_US |
| dc.type | Article | en_US |