The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films
| dc.citation.epage | 400 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 397 | en_US |
| dc.citation.volume | 80 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Lin, PY | en_US |
| dc.contributor.author | Wu, YCS | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:40:51Z | |
| dc.date.available | 2014-12-08T15:40:51Z | |
| dc.date.issued | 2003-05-26 | en_US |
| dc.description.abstract | Micron-size V defects were found on the hydride vapor phase epitaxy grown GaN films. When the film thickness increased, the diameter of V defects increased, but the density of the defects decreased. The defect has six {1 1 0 1} facets, which encircle to form a concave hexagonal pyramid. Its shape is similar to that of epitaxial lateral overgrowth (ELO) GaN crystal grown on a dot-patterned GaN underlying layer. Through the analysis of the growth mechanism of ELO GaN, the growth mechanism of the V defects was investigated. (C) 2003 Elsevier Science B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0254-0584(03)00109-3 | en_US |
| dc.identifier.issn | 0254-0584 | en_US |
| dc.identifier.journal | MATERIALS CHEMISTRY AND PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0254-0584(03)00109-3 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27852 | |
| dc.identifier.wosnumber | WOS:000182508000003 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaN | en_US |
| dc.subject | hydride vapor phase epitaxy | en_US |
| dc.subject | V defect | en_US |
| dc.subject | epitaxial lateral overgrowth | en_US |
| dc.subject | growth mechanism | en_US |
| dc.title | The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films | en_US |
| dc.type | Article | en_US |