Multilevel resistive switching memory with amorphous InGaZnO-based thin film
| dc.citation.epage | en_US | |
| dc.citation.issue | 6 | en_US |
| dc.citation.volume | 102 | en_US |
| dc.citation.woscount | 10 | |
| dc.contributor.author | Hsu, Ching-Hui | en_US |
| dc.contributor.author | Fan, Yang-Shun | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:29:30Z | |
| dc.date.available | 2014-12-08T15:29:30Z | |
| dc.date.issued | 2013-02-11 | en_US |
| dc.description.abstract | Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792316] | en_US |
| dc.identifier.doi | 10.1063/1.4792316 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4792316 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21219 | |
| dc.identifier.wosnumber | WOS:000315053300067 | |
| dc.language.iso | en_US | en_US |
| dc.title | Multilevel resistive switching memory with amorphous InGaZnO-based thin film | en_US |
| dc.type | Article | en_US |