Ga0.5In0.5P barrier layer for wet oxidation of AlAs
| dc.citation.epage | 2584 | en_US |
| dc.citation.issue | 5A | en_US |
| dc.citation.spage | 2583 | en_US |
| dc.citation.volume | 39 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Lee, SC | en_US |
| dc.contributor.author | Lee, WI | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:20Z | |
| dc.date.available | 2014-12-08T15:45:20Z | |
| dc.date.issued | 2000-05-01 | en_US |
| dc.description.abstract | We study the stability of Ga0.5In0.5P acid Al0.4Ga0.6As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga0.5In0.5P or Al0.4Ga0.6As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga0.5In0.5P barrier layer is more stable than the Al0.4Ga0.6As layer at higher oxidation temperatures and longer periods of oxidation time. | en_US |
| dc.identifier.doi | 10.1143/JJAP.39.2583 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.39.2583 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30558 | |
| dc.identifier.wosnumber | WOS:000088909500019 | |
| dc.language.iso | en_US | en_US |
| dc.subject | wet oxidation | en_US |
| dc.subject | AlAs | en_US |
| dc.subject | Ga0.5In0.5P | en_US |
| dc.subject | AlGaAs | en_US |
| dc.subject | GaAs | en_US |
| dc.subject | interface | en_US |
| dc.title | Ga0.5In0.5P barrier layer for wet oxidation of AlAs | en_US |
| dc.type | Article | en_US |