A light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well
| dc.citation.epage | 334 | en_US |
| dc.citation.issue | 1-4 | en_US |
| dc.citation.spage | 331 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Suen, YW | en_US |
| dc.contributor.author | Young, CC | en_US |
| dc.contributor.author | Chang, CJ | en_US |
| dc.contributor.author | Wu, JC | en_US |
| dc.contributor.author | Wang, SY | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:42Z | |
| dc.date.available | 2014-12-08T15:45:42Z | |
| dc.date.issued | 2000-02-01 | en_US |
| dc.description.abstract | We will present the observation of a light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the mete-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region. (C) 2000 Elsevier Science B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S1386-9477(99)00166-6 | en_US |
| dc.identifier.issn | 1386-9477 | en_US |
| dc.identifier.journal | PHYSICA E | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S1386-9477(99)00166-6 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30744 | |
| dc.identifier.wosnumber | WOS:000085770600080 | |
| dc.language.iso | en_US | en_US |
| dc.subject | double barrier tunneling diode | en_US |
| dc.subject | magnetic field | en_US |
| dc.subject | impurity state | en_US |
| dc.title | A light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well | en_US |
| dc.type | Article | en_US |