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Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells

dc.citation.epageen_US
dc.citation.issue1en_US
dc.citation.volume102en_US
dc.citation.woscount7
dc.contributor.authorChen, Cheng-Changen_US
dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorShih, M. H.en_US
dc.contributor.authorKuo, Ming-Yenen_US
dc.contributor.authorHuang, Ji-Kaien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChen, Shih-Puen_US
dc.contributor.authorLee, Li-Lingen_US
dc.contributor.authorJeng, Ming-Shanen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:29:12Z
dc.date.available2014-12-08T15:29:12Z
dc.date.issued2013-01-07en_US
dc.description.abstractIn this study, a multi-color emission was observed from the large-area GaN-based photonic quasicrystal (PQC) nanopillar laser. The GaN PQC nanostructure was fabricated on an n-GaN layer by using nanoimprint lithographic technology. The regrown InGaN/GaN multiple quantum wells (MQWs) formed a nanopyramid structure on top of the PQC nanopillars. A lasing action was observed at ultraviolet wavelengths with a low threshold power density of 24 mJ/cm(2), and a green color emission from InGaN/GaN MQWs was also achieved simultaneously. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775373]en_US
dc.identifier.doi10.1063/1.4775373en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4775373en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/21051
dc.identifier.wosnumberWOS:000313646500034
dc.language.isoen_USen_US
dc.titleLarge-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wellsen_US
dc.typeArticleen_US

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