Thermal stability of Ti/Pt/Cu Schottky contact on InAlAs layer
| dc.citation.epage | en_US | |
| dc.citation.issue | 8 | en_US |
| dc.citation.volume | 89 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Lien, Yi-Chung | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.author | Chen, Szu-Hung | en_US |
| dc.contributor.author | Chu, Li-Hsin | en_US |
| dc.contributor.author | Chen, Po-Chou | en_US |
| dc.contributor.author | Hsieh, Yen-Chang | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:16:01Z | |
| dc.date.available | 2014-12-08T15:16:01Z | |
| dc.date.issued | 2006-08-21 | en_US |
| dc.description.abstract | Electrical characteristics and thermal stability of the Ti/Pt/Cu Schottky contact on InAlAs were investigated. The Ti/Pt/Cu Schottky contact had comparable electrical properties compared to the conventional Ti/Pt/Au contact after annealing. As judged from the material analysis, the Ti/Pt/Cu on InAlAs after 350 degrees C annealing showed no diffusion sign into the InAlAs. After 400 degrees C annealing, the interfacial mixing of Cu and the underlying layers occurred and resulted in the formation of Cu4Ti. The results show that Ti/Pt/Cu Schottky contact using platinum as the diffusion barrier is very stable up to 350 degrees C annealing and can be used for InAlAs/InGaAs high-electron mobility transistors and monolithic microwave integrated circuits. (c) 2006 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2338567 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2338567 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11906 | |
| dc.identifier.wosnumber | WOS:000240035400115 | |
| dc.language.iso | en_US | en_US |
| dc.title | Thermal stability of Ti/Pt/Cu Schottky contact on InAlAs layer | en_US |
| dc.type | Article | en_US |