A Polar Modulated CMOS Class-E Amplifier with a Class-F Driver Stage

Abstract

This work presents a fully integrated polar modulated CMOS class-E amplifier in a 0.18 mu m CMOS process. The amplifier using the device-stacking topology is implemented with a self-biased control circuit, which allows the stacked device operating as a resistance, for linearizing the AM-AM and AM-PM distortion. The simulation result shows that the AM-PM distortion is reduced from 18 degrees to 3 degrees. The linearized class-E amplifier with the class-F driver stage can provide the maximum power gain of 21 dB, the maximum output power of 17 dBm, and the peak power-added efficiency (PAE) of 30% from the supply voltage of 2 V.