A Polar Modulated CMOS Class-E Amplifier with a Class-F Driver Stage
| dc.citation.epage | 661 | en_US |
| dc.citation.spage | 658 | en_US |
| dc.contributor.author | Tsou, Wen-An | en_US |
| dc.contributor.author | Wuen, Wen-Shen | en_US |
| dc.contributor.author | Wen, Kuei-Ann | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:22:03Z | |
| dc.date.available | 2014-12-08T15:22:03Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.abstract | This work presents a fully integrated polar modulated CMOS class-E amplifier in a 0.18 mu m CMOS process. The amplifier using the device-stacking topology is implemented with a self-biased control circuit, which allows the stacked device operating as a resistance, for linearizing the AM-AM and AM-PM distortion. The simulation result shows that the AM-PM distortion is reduced from 18 degrees to 3 degrees. The linearized class-E amplifier with the class-F driver stage can provide the maximum power gain of 21 dB, the maximum output power of 17 dBm, and the peak power-added efficiency (PAE) of 30% from the supply voltage of 2 V. | en_US |
| dc.identifier.doi | 10.1109/IITA.2009.403 | en_US |
| dc.identifier.isbn | 978-0-7695-3859-4 | en_US |
| dc.identifier.journal | 2009 THIRD INTERNATIONAL SYMPOSIUM ON INTELLIGENT INFORMATION TECHNOLOGY APPLICATION, VOL 3, PROCEEDINGS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/IITA.2009.403 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15642 | |
| dc.identifier.wosnumber | WOS:000275935000166 | |
| dc.language.iso | en_US | en_US |
| dc.title | A Polar Modulated CMOS Class-E Amplifier with a Class-F Driver Stage | en_US |
| dc.type | Article | en_US |