Comparison of Parasitic Capacitances of Packaged Cascode Gallium Nitride Field-efect Transistors

dc.citation.epage	461	en_US
dc.citation.issue	1	en_US
dc.citation.spage	453	en_US
dc.citation.volume	30	en_US
dc.contributor.author	Wu, Chih-Chiang	en_US
dc.contributor.author	Jeng, Shyr-Long	en_US
dc.contributor.department	機械工程學系	zh_TW
dc.contributor.department	Department of Mechanical Engineering	en_US
dc.date.accessioned	2018-08-21T05:53:37Z
dc.date.available	2018-08-21T05:53:37Z
dc.date.issued	2018-01-01	en_US
dc.description.abstract	In this work, we examined the electrical characteristics of laboratory-fabricated cascode gallium nitride field-effect transistors (GaN FETs) and analyzed their parasitic capacitances. The calculated results were in good agreement with the experimental results and showed that commercial GaN FETs have superior switching performance, whereas laboratory-fabricated GaN FETs require further improvement.	en_US
dc.identifier.doi	10.18494/SAM.2018.1746	en_US
dc.identifier.issn	0914-4935	en_US
dc.identifier.journal	SENSORS AND MATERIALS	en_US
dc.identifier.uri	http://dx.doi.org/10.18494/SAM.2018.1746	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/144934
dc.identifier.wosnumber	WOS:000431392900015	en_US
dc.language.iso	en_US	en_US
dc.subject	gallium nitride	en_US
dc.subject	cascode	en_US
dc.subject	parasitic capacitance	en_US
dc.title	Comparison of Parasitic Capacitances of Packaged Cascode Gallium Nitride Field-efect Transistors	en_US
dc.type	Article	en_US

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