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Organic thin-film transistors with reduced photosensitivity

dc.citation.epage772en_US
dc.citation.issue6en_US
dc.citation.spage767en_US
dc.citation.volume8en_US
dc.citation.woscount9
dc.contributor.authorChuang, Chiao-Shunen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:12:59Z
dc.date.available2014-12-08T15:12:59Z
dc.date.issued2007-12-01en_US
dc.description.abstractOrganic thin-film transistors with a minimal threshold voltage shift and a more stable photocurrent under illuminated conditions can be made by embedding titanium dioxide (TiO2) nanoparticles into a polymer dielectric layer. While the studies of pentacene morphology using atomic force microscopy and X-ray diffraction have shown similar results before and after embedding the TiO2 into the dielectric layer, it has been found that the presence of TiO2 nanoparticles is essential. The reduced photosensitivity can be attributed to the recombination centers induced by the TiO2 nanopartilces and this can enhance substantially the recombination process of the electrons trapped in the channel. (c) 2007 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.orgel.2007.06.012en_US
dc.identifier.issn1566-1199en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2007.06.012en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/10021
dc.identifier.wosnumberWOS:000251199200017
dc.language.isoen_USen_US
dc.subjectorganicen_US
dc.subjectphotosensitivityen_US
dc.subjectnanoparticleen_US
dc.subjectdielectricsen_US
dc.subjectthin-film transistorsen_US
dc.titleOrganic thin-film transistors with reduced photosensitivityen_US
dc.typeArticleen_US

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