Investigation of Emission Polarization and Strain in InGaN-GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates

Abstract

Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 x 10(-2) to 2.58 x 10(-2) while the nanorod height in templates increases from 0 to 1.7 mu m. The polarization ratio of the emission from InGaN MQWs varies from 85% to 53% along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.